1 pin no. pin name 1 gate1 2 source2 3 gate2 4 drain2 5 source1 6 drain1 circuit ? n-ch ? p-ch 7 - pin configuration sot-26(top view) ELM16601EA-S complementary mosfet ELM16601EA-S uses advanced trench technology to provide excellent rds(on) and low gate charge. n-channel p-channel ? vds=30v vds=-30v ? id=3.4a(vgs=10v) id=-2.3a(vgs=-10v) ? rds(on) < 60m(vgs=10v) rds(on) < 135m(vgs=-10v) ? rds(on) < 75m(vgs=4.5v) rds(on) < 185m(vgs=-4.5v) ? rds(on) < 115m(vgs=2.5v) rds(on) < 265m(vgs=-2.5v) parameter symbol n-ch (max.) p-ch (max.) unit note drain - source voltage vds 30 -30 v gate - source voltage vgs 12 12 v continuous drain current ta=25c id 3.4 -2.3 a 1 ta=70c 2.7 -1.8 pulsed drain current idm 30 -30 a 2 power dissipation ta=25c pd 1.15 1.15 w ta=70c 0.73 0.73 junction and storage temperature range tj,tstg - 55 to 150 - 55 to 150 c s 2 g 2 d 2 s 1 g 1 d 1 general description features maximum absolute ratings thermal characteristics parameter symbol device typ. max. unit note maximum junction - to - ambient t10s rja n-ch 78 110 c /w 1 maximum junction - to - ambient steady-state 106 150 c /w maximum junction - to - lead steady-state rjl 64 80 c /w 3 maximum junction - to - ambient t10s rja p-ch 78 110 c /w 1 maximum junction - to - ambient steady-state 106 150 c /w maximum junction - to - lead steady-state rjl 64 80 c /w 3 1 3 5 6 2 4
2 electrical characteristics (n-ch) ta=25 c parameter symbol conditions min. typ. max. unit static parameters drain - source breakdown voltage bvdss id=250a, vgs=0v 30 v zero gate voltage drain current idss vds=24v, vgs = 0v 1 a tj=55c 5 gate - body leakage current igss vds=0v, vgs= 12v 100 na gate threshold voltage vgs(th) vds=vgs, id=250a 0.6 1.0 1.4 v on state drain current id(on) vgs=4.5v, vds=5v 10 a static drain - source on - resistance rds(on) vgs=10v, id= 3a 50 60 m tj = 125c 75 vgs = 4.5v, id = 3a 60 75 vgs = 2.5v, id = 2a 88 115 forward transconductance gfs vds = 5v, id = 3a 7.8 s diode forward voltage vsd is = 1a, vgs=0v 0.8 1.0 v max.body - diode continuous current is 1.5 a dynamic parameters input capacitance ciss vgs=0v, vds=15v, f=1mhz 390.0 pf output capacitance coss 54.5 pf reverse transfer capacitance crss 41.0 pf gate resistance rg vgs = 0v, vds = 0v, f = 1mhz 3 switching parameters total gate charge qg vgs=4.5v, vds=15v, id=3a 4.34 nc gate - source charge qgs 1.38 nc gate - drain charge qgd 0.60 nc turn - on delay time td(on) vgs=10v, vds=15v rl=5, rgen=6 4 ns turn - on rise time tr 2 ns turn - off delay time td(off) 22 ns turn - off fall time tf 3 ns body - diode reverse recovery time trr if =3 a, dl/dt = 100a/s 11.0 ns body - diode reverse recovery charge qrr if =3 a, dl/dt = 100a/s 5.5 nc complementary mosfet ELM16601EA-S note : 1. 2. 3. 4. 5. the value of rja is measured with the device mounted on 1in2 fr-4 board of 2oz. copper, in still air environment with ta=25 c . the value in any given applications depends on the users speci?c board design, the current rating is based on the t 10s themal resistance rating. repetitive rating, pulse width limited by junction temperature. the rja is the sum of the thermal impedance from junction to lead rjl and lead to ambient. the static characteristics in figures 1 to 6 are obtained using 8 0s pulses, duty cycle 0.5%max. these tests are performed with the device mounted on 1in2 fr-4 board with 2oz. copper, in a still air environment with ta=25 c . the soa curve provides a single pulse rating. 7 -
3 complementary mosfet ELM16601EA-S typical electrical and thermal characteristics (n-ch) ao6601 n-channel typical characteristics typical electrical and thermal characteristics 0 3 6 9 12 15 0 1 2 3 4 5 vds (volts) fig 1: on-region characteristics i d (a) vgs =2v 2.5v 3v 4.5v 10v 0 2 4 6 8 10 0 0.5 1 1.5 2 2.5 3 3.5 vgs (volts) figure 2: transfer characteristics i d (a) 0 25 50 75 100 125 150 0 2 4 6 8 10 i d (a) figure 3: on-resistance vs. drain current and gate voltage rds(on) (m ? ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 vsd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance vgs =2.5v vgs =10v vgs =4.5v 0 50 100 150 200 0 2 4 6 8 10 vgs (volts) figure 5: on-resistance vs. gate-source voltage rds(on) (m ? ) 25c 125c vds =5v vgs =2.5v vgs =4.5v vgs =10v i d =2a 25c 125c alpha and omega semiconductor, ltd. 7 -
4 complementary mosfet ELM16601EA-S 7 - ao6601 n-channel typical characteristics typical electrical and thermal characteristics 0 1 2 3 4 5 0 1 2 3 4 5 6 q g (nc) figure 7: gate-charge characteristics vgs (volts) 0 100 200 300 400 500 600 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 5 10 15 20 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ? ja normalized transient ther mal resistance c oss c rss 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 ? s 10ms 1ms 0.1s 1s 10s dc rds(on) limited tj(max.) =150c t a =25c 10 ? s vds =15v i d =3.4a single pulse d=t o n / t t j ,pk =t a +p dm .z ? ja .r ? ja r ? ja =110c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse tj(max.) =150c t a =25c alpha & omega semiconductor, ltd.
5 ta=25 c complementary mosfet ELM16601EA-S note : 1. 2. 3. 4. 5. the value of rja is measured with the device mounted on 1in2 fr-4 board of 2oz. copper, in still air environment with ta=25 c . the value in any given applications depends on the users speci?c board design, the current rating is based on the t 10s themal resistance rating. repetitive rating, pulse width limited by junction temperature. the rja is the sum of the thermal impedance from junction to lead rjl and lead to ambient. the static characteristics in figures 1 to 6 are obtained using 8 0s pulses, duty cycle 0.5%max. these tests are performed with the device mounted on 1in2 fr-4 board with 2oz. copper, in a still air environment with ta=25 c . the soa curve provides a single pulse rating. 7 - electrical characteristics (p-ch) parameter symbol conditions min. typ. max. unit static parameters drain - source breakdown voltage bvdss id= - 250a, vgs=0v -30 v zero gate voltage drain current idss vds=-24v, vgs= 0v - 1 a tj=55c - 5 gate-body leakage current igss vds=0v, vgs= 12v 100 na gate threshold voltage vgs(th) vds=vgs, id= - 250a -0.6 -1.0 -1.4 v on state drain current id(on) vgs= - 4.5v, vds= - 5v -10 a static drain - source on - resistance rds(on) vgs=-10v, id=-2.3 a 107 135 m tj = 125c vgs =- 4.5v, id =- 2a 135 185 m vgs =- 2.5v, id =- 1a 195 265 m forward transconductance gfs vds =- 5v, id =-2.3 a 8 s diode forward voltage vsd is =- 1a, vgs=0v -0.85 -1.00 v max. body - diode continuous current is -1.35 a dynamic parameters input capacitance ciss vgs=0v, vds=-15v, f=1mhz 409 pf output capacitance coss 55 pf reverse transfer capacitance crss 42 pf gate resistance rg vgs = 0v, vds = 0v, f = 1mhz 12 switching parameters total gate charge qg vgs=-4.5v, vds=-15v id=-2.5a 4.80 nc gate-source charge qgs 1.34 nc gate-drain charge qgd 0.72 nc turn - on delay time td(on) vgs=-10v, vds=-15v rl=6, rgen=6 13 ns turn - on rise time tr 10 ns turn - off delay time td(off) 28 ns turn - off fall time tf 13 ns body diode reverse recovery time trr if =-2.5 a, dl/dt = 100a/s 26.0 ns body diode reverse recovery charge qrr if =-2.5 a, dl/dt = 100a/s 15.6 nc
6 complementary mosfet ELM16601EA-S 7 - typical electrical and thermal characteristics (p-ch) ao6601, ao6601l p-channel: typical electrical and thermal characteristics 0 5 10 15 20 0 1 2 3 4 5 -v ds (volts) fig 1: on-region characteristics -i d (a) vgs =-3.5v -2.5v -2v -4.5v -10v 0 2 4 6 8 10 0 0.5 1 1.5 2 2.5 3 3.5 4 -v gs (volts) figure 2: transfer characteristics -i d (a) 50 75 100 125 150 175 200 225 250 0 1 2 3 4 5 6 -i d (a) figure 3: on-resistance vs. drain current and gate voltage rds(on) (m ? ) 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -vsd (volts) figure 6: body-diode characteristics -i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance vgs =-4.5v, vgs =-10v vgs =-2.5v 0 50 100 150 200 250 300 350 0 2 4 6 8 10 -vgs (volts) figure 5: on-resistance vs. gate-source voltage rds(on) (m ? ) 25c 125c vds =-5v vgs =-4.5v vgs =-10v i d =-2a 25c 125c i d =-2a -4v vgs =-2.5v -5v -3v alpha and omega semiconductor, ltd.
7 complementary mosfet ELM16601EA-S 7 - ao6601 p-channel typical characteristics typical electrical and thermal characteristics 0 1 2 3 4 5 0 1 2 3 4 5 6 -q g (nc) figure 7: gate-charge characteristics -vgs (volts) 0 100 200 300 400 500 600 0 5 10 15 20 25 30 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 5 10 15 20 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ? ja normalized transient ther mal resistance c oss c rss 0.1 1.0 10.0 100.0 0.1 1 10 100 -v ds (volts) -i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 ? s 10ms 1ms 0.1s 1s 10s dc rds(on) limited tj(max.) =150c t a =25c vds =-15v i d =-2.0a single pulse d=t o n / t t j ,pk =t a +p dm .z ? ja .r ? ja r ? ja =110c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse tj(max.) =150c t a =25c 10 ? s alpha & omega semiconductor, ltd.
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